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| BUL791 NPN SILICON POWER TRANSISTOR Copyright (c) 1997, Power Innovations Limited, UK JULY 1991 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C ambient temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Peak collector current (see Note 2) Continuous base current Peak base current (see Note 2) Continuous device dissipation at (or below) 25C case temperature Operating junction temperature range Storage temperature range NOTES: 1. This value applies for tp = 10 ms, duty cycle 2%. 2. This value applies for tp = 300 s, duty cycle 2%. SYMBOL VCES VCBO VCEO V EBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 4 8 14 2.5 3.5 75 -65 to +150 -65 to +150 UNIT V V V V A A A A A W C C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO VBE(sat) VCE(sat) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Base-emitter saturation voltage Collector-emitter saturation voltage Forward current transfer ratio Collector-base forward bias diode voltage IC = 100 mA VCE = 700 V VCE = 700 V VEB = 9V TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 IC = 0 IC = IC = IC = IC = IC = IC = 2A 2A 2A 2A 2A 8A (see Notes 4 and 5) TC = 90C (see Notes 4 and 5) TC = 90C 10 6 2 0.94 0.86 0.25 0.3 16.5 12 6.5 850 22 14 mV 0.4 TC = 90C (see Note 3) MIN 400 10 200 1 1 TYP MAX UNIT V A mA V V IB = 400 mA IB = 400 mA IB = 400 mA IB = 400 mA VCE = VCE = VCE = 1V 1V 5V IC = 10 mA hFE V FCB ICB = 60 mA NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics PARAMETER RJA RJC Junction to free air thermal resistance Junction to case thermal resistance MIN TYP MAX 62.5 1.66 UNIT C/W C/W inductive-load switching characteristics at 25C case temperature PARAMETER tsv tfi txo tsv tfi Storage time Current fall time Cross over time Storage time Current fall time IC = 2 A L = 1 mH IC = 2 A L = 1 mH TEST CONDITIONS IB(on) = 400 mA IB(off) = 800 mA IB(on) = 400 mA IB(off) = 250 mA VCC = 40 V V CLAMP = 300 V VCC = 40 V V CLAMP = 300 V MIN TYP 2.2 95 210 4 120 MAX 3 180 300 6 230 UNIT s ns ns s ns resistive-load switching characteristics at 25C case temperature PARAMETER tsv tfi Storage time Current fall time IC = 2 A V CC = 300 V TEST CONDITIONS IB(on) = 400 mA IB(off) = 400 mA MIN TYP 2.2 160 MAX 3 250 UNIT s ns PRODUCT INFORMATION 2 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT TC = 25C hFE - Forward Current Transfer Ratio VCE(sat) - Collector-Emitter Saturation Voltage - V 30 L791CHF COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 IB = IC / 5 TC = 25C TC = 90C L791CVB 10 1*0 0*1 VCE = 1 V VCE = 5 V 1*0 0*01 0*1 1*0 10 20 0*01 0*1 1*0 IC - Collector Current - A 10 IC - Collector Current - A Figure 1. Figure 2. INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT 10 IB(on) = IC / 5 IB(off) = I C / 2.5 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25C L791CI1 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 10 L791CI3 Inductive Switching Time - s 1*0 Inductive Switching Time - s t sv t xo t fi IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 800 mA, VCLAMP = 300 V, IC = 2 A 1*0 0*1 0*1 tsv tfi 0*01 0*1 0*01 1*0 IC - Collector Current - A 10 0 20 40 60 80 100 TC - Case Temperature - C Figure 3. Figure 4. PRODUCT INFORMATION 3 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT 10 IB(on) = IC / 5 IB(off) = I C / 8 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25C 1*0 L791CI2 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 10 L791CI4 tsv tfi Inductive Switching Time - s IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 250 mA, VCLAMP = 300 V, IC = 2 A Inductive Switching Time - s 1*0 tsv tfi 0*1 0*1 0*1 1*0 IC - Collector Current - A 10 0 20 40 60 80 100 TC - Case Temperature - C Figure 5. Figure 6. RESISTIVE SWITCHING TIMES vs COLLECTOR CURRENT 10 IB(on) IB(off) Resistive Switching Time - s = IC / 5, VCC = 300 V = IC / 5, T C = 25C Resistive Switching Time - s L791CR1 RESISTIVE SWITCHING TIMES vs CASE TEMPERATURE 10 IB(on) = 400 mA, VCC = 300 V IB(off) = 400 mA, I C = 2 A L791CR2 1*0 1*0 tsv tfi 0*1 0*1 0*1 1*0 IC - Collector Current - A 10 0 tsv tfi 20 40 60 80 100 TC - Case Temperature - C Figure 7. Figure 8. PRODUCT INFORMATION 4 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 L791CFB MAXIMUM REVERSE-BIAS SAFE OPERATING AREA 10 L791CRB 8 IC - Collector Current - A 1*0 IC - Collector Current - A IB(on) = IC / 5 VBE(off) = -5 V TC = 25C 6 0*1 TC = 25C tp = 10 s tp = 100 s tp = 1 ms tp = 10 ms DC Operation 10 100 1000 4 2 0*01 1*0 0 0 100 200 300 400 500 600 700 800 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter Voltage - V Figure 9. Figure 10. PRODUCT INFORMATION 5 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 6 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 7 |
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